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IRGB20B60PD1

Name: IRGB20B60PD1
Brand: Infineon Technologies
SKU: 161253
Availability: InStock
Rating: 4.84 (48 reviews)

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Part No	IRGB20B60PD1
Manufacturer	Infineon Technologies
Catalog	IGBTs - Single
Description	IGBT 600V 40A 215W TO220AB
Datasheet	IRGB20B60PD1 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tube/Rail
Status	Active
IGBT Type	NPT
VCEO Maximum Collector-Emitter Breakdown Voltage	600V
Maximum Current Collector	40A
Pulsed Collector Current	80A
Collector-emitter saturation voltage(Max)	2.8V @ 15V, 20A
Maximum Power Dissipation	215W
Total Switching Energy(Ets)	95μJ (on), 100μJ (off)
Input Type	Standard
Gate Charge	68nC
Turn-on and Turn-off delay time	20ns/115ns
Testing Conditions	390V, 13A, 10 Ohm, 15V
Reverse Recovery Time (trr)	28ns
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	Through Hole
Case / Package	TO-220AB
Win Source Part Number	205439-IRGB20B60PD1
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IRGB20B60PD1 CAD Model

Description

The IRGB20B60PD1 is an NPT IGBT designed for use in discrete semiconductor products.

Manufacturer: Infineon Technologies
Mounting: Through Hole
Reverse Recovery Time (trr): 28ns
Input Type: Standard
Gate Charge: 68nC
Temperature Range: -55°C to 150°C (TJ)
Maximum Current Collector: 40A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 215W
Pulsed Collector Current: 80A

Its supply and demand status is limited.

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
9+	$6.0000	$54.0000
21+	$4.9231	$103.3851
32+	$4.7693	$152.6176
44+	$4.6154	$203.0776
57+	$4.4616	$254.3112
75+	$4.0000	$300.0000

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 2,190 pieces

MOQ: 9 pcs

Order Increment : 1 pcs

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