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IRG7PSH50UDPBF

Part No IRG7PSH50UDPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT TRENCH 1200V 116A SUPER247 / IGBT Trench 1200 V 116 A 462 W Through Hole SUPER-247™ (TO-274AA)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Infineon Technologies
Package Tube
Product Status Obsolete
IGBT Type Trench
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 116 A
Current - Collector Pulsed (Icm) 150 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 50A
Power - Max 462 W
Switching Energy 3.6mJ (on), 2.2mJ (off)
Input Type Standard
Gate Charge 440 nC
Td (on/off) @ 25°C 35ns/430ns
Test Condition 600V, 50A, 5Ohm, 15V
Reverse Recovery Time (trr) 190 ns
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package SUPER-247™ (TO-274AA)
Base Product Number IRG7PSH
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001532744
Standard Package 25
Win Source Part Number 1024625-IRG7PSH50UDPBF
Ultra Librarian 3D Model Ultra Librarian IRG7PSH50UDPBF CAD Model

Description

The Infineon Technologies 1024625-IRG7PSH50UDPBF is a Trench IGBT type transistor with a maximum collector-emitter breakdown voltage of 1200V and a maximum collector current of 116A.

  • It has a power rating of 462W and a switching energy of 3.6mJ (on) and 2.2mJ (off).
  • The device comes in a TO-247-3 package and has a gate charge of 440 nC.
  • The reverse recovery time (trr) of the transistor is 190 ns and the device is rated to operate between -55°C to 150°C.
  • The IRG7PSH50UDPBF is a part of the Discrete Semiconductor Products category and is ideal for use in IGBTs - Single applications.

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