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IRFU5410

Part No IRFU5410
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Power MOSFET(Vdss=-100V, Rds(on)=0.205ohm, Id=-13A) | MOSFET P-CH 100V 13A I-PAK
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 13A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 205mOhm at 7.8A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 58nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 760pF at 25V
Power Dissipation (Maximum) 66W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package IPAK (TO-251)
Manufacturer Package TO-251-3 Short Leads, IPak, TO-251AA
Manufacturer Pack Quantity 75
MSL Level 1 (Unlimited)
Win Source Part Number 1188111-IRFU5410
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFU5410 CAD Model

Description

The Infineon Technologies IRFU5410 is a P-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 13A
  • Maximum Power Dissipation: 66W
  • Maximum Input Capacitance: 760pF @ 25V
  • Gate Charge: 58nC @ 10V
  • Gate-Source Voltage: ±20V
  • Mounting Style: Through-Hole
  • Package: IPAK (TO-251)
  • Status: Obsolete
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.4043 $58.6235
350+ $0.3315 $116.0250
540+ $0.3211 $173.3940
745+ $0.3107 $231.4715
965+ $0.3003 $289.7895
1,290+ $0.2691 $347.1390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 51,000 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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