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IRFS38N20DTRLP Infineon Technologies IRFS38N20DTRLP Real Image IRFS38N20DTRLP label picture
Same model may have multiple batches, images only for reference.
IRFS38N20DTRLP Infineon Technologies IRFS38N20DTRLP Real Image IRFS38N20DTRLP label picture
IRFS38N20DTRLP Infineon Technologies IRFS38N20DTRLP Real Image IRFS38N20DTRLP label picture
Same model may have multiple batches, images only for reference.

IRFS38N20DTRLP

Part No IRFS38N20DTRLP
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFETPower MOSFET | MOSFET N-CH 200V 43A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 43A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 54mOhm at 26A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 91nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2900pF at 25V
Power Dissipation (Maximum) 3.8W, 300W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1188006-IRFS38N20DTRLP
Manufacturer Homepage www.irf.com
Family Name IRFS38N20
Introduction Date August 11, 2004
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFS38N20DTRLP CAD Model

Description

The Infineon Technologies 1188006-IRFS38N20DTRLP is a high popularity product with a balanced supply and demand status.

  • Product: Infineon Technologies 1188006-IRFS38N20DTRLP
  • Popularity: High
  • Supply and Demand: Balanced
  • Type: MOSFET Transistor
  • Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 43A
  • Rds On: 54mOhm @ 26A, 10V
  • Gate-Source Voltage(th) (maximum): 5V @ 250μA
  • Gate Charge (Qg) (maximum): 91nC @ 10V
  • Gate-Source Voltage (maximum): ±20V
  • Input Capacitance (Ciss) (maximum): 2900pF @ 25V
  • Package: D2PAK
  • Mounting: SMD
  • Category: Discrete Semiconductor Products
  • Introduction Date: August 11, 2004
  • Alternative Parts: FDB52N20, FDB52N20TM, and STB75NF20
  • ECCN: EAR99
  • Estimated EOL Date: 2024
  • Halogen-Free: Yes

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