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Same model may have multiple batches, images only for reference.
IRFS23N20DPBF Real Image
Same model may have multiple batches, images only for reference.

IRFS23N20DPBF

Part No IRFS23N20DPBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET N-CH 200V 24A D2PAK / SMPS MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon Technologies
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) at 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 100mOhm at 14A, 10V
Vgs(th) (Maximum) at Id 5.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 86nC at 10V
Maximum Vgs ±30V
Input Capacitance (Ciss) (Maximum) at Vds 1960pF at 25V
Power Dissipation (Maximum) 3.8W , 170W (Tc)
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 803909-IRFS23N20DPBF
Ultra Librarian 3D Model Ultra Librarian IRFS23N20DPBF CAD Model

Description

The Infineon Technologies IRFS23N20DPBF is an N-channel MOSFET type integrated circuit.

  • Temperature Range: -55°C to 175°C
  • Drain to Source Voltage: 200V
  • Maximum Power Dissipation: 3.8W
  • Package: D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
  • Popularity: medium
  • Gate Charge @ 10V: 86nC
  • Input Capacitance @ 25V: 1960pF
  • Continuous Drain Current @ 25°C: 24A

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $15.8608 $63.4432
9+ $13.0141 $117.1269
14+ $12.6074 $176.5036
19+ $12.2007 $231.8133
25+ $11.7939 $294.8475
33+ $10.5739 $348.9387
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