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IRFH8337TR2PBF

Part No IRFH8337TR2PBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET N-CH 30V 9.7A 5X6 PQFN
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 12A, 35A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 12.8mOhm at 16.2A, 10V
Gate Source Voltage(th) (Maximum) at Id 2.35V at 25μA
Gate Charge (Qg) (Maximum) at Vgs 10nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 790pF at 10V
Power Dissipation (Maximum) 3.2W, 27W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package PQFN (5x6)
Manufacturer Package 8-PowerTDFN
Manufacturer Pack Quantity 1
MSL Level 3 (168 Hours)
Win Source Part Number 714563-IRFH8337TR2PBF
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFH8337TR2PBF CAD Model

Description

The IRFH8337TR2PBF is an electronic component manufactured by Infineon Technologies.

  • Technology: MOSFET
  • Popularity: Low
  • Supply and Demand Status: Limited
  • Packaging: Reel
  • Mounting Style: SMD
  • Transistor Polarity: N-channel
  • Categories: Discrete semiconductor products
  • Supplier Device Package: PQFN (5x6)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Product Status: Obsolete
  • Operating Temperature: -55°C ~ 150°C
  • Manufacturer Package: 8-PowerTDFN
  • Power Dissipation (maximum): 3.2W, 27W

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