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IRF7769L1TRPBF

Name: IRF7769L1TRPBF
Brand: Infineon Technologies
SKU: 801353
Availability: InStock
Rating: 4.84 (230 reviews)

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Part No	IRF7769L1TRPBF
Manufacturer	Infineon Technologies
Catalog	FETs - Single
Description	MOSFET N-CH 100V 20A DIRECTFET / Ideal for High Performance Isolated Converter Primary Switch Socket
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Manufacturer	Infineon Technologies
Packaging	Reel
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) at 25°C	20A , 124A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	3.5mOhm at 74A, 10V
Vgs(th) (Maximum) at Id	4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	300nC at 10V
Maximum Vgs	±20V
Input Capacitance (Ciss) (Maximum) at Vds	11560pF at 25V
Power Dissipation (Maximum)	3.3W , 125W (Tc)
Temperature Range - Operating	-55°C ~ 175°C
Mounting Style	SMD
Supplier Device Package	DIRECTFET L8
Manufacturer Package	DirectFET Isometric L8
Manufacturer Pack Quantity	4,000
MSL Level	1 (Unlimited)
Popularity	High
Supply and Demand Status	Sufficient
Win Source Part Number	801353-IRF7769L1TRPBF
Ultra Librarian 3D Model	Ultra Librarian IRF7769L1TRPBF CAD Model

Description

The IRF7769L1TRPBF is a N-Channel MOSFET from Infineon Technologies.

Drain to Source Voltage: 100V (maximum)
Continuous Drain Current @ 25°C: 20A, 124A (Tc)
Rds On (Maximum) @ Id, Vgs: 3.5mOhm @ 74A, 10V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Temperature Range: -55°C ~ 175°C
Power Dissipation: 3.3W, 125W (Tc)

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
9+	$5.5928	$50.3352
22+	$4.5889	$100.9558
34+	$4.4455	$151.1470
47+	$4.3021	$202.1987
61+	$4.1587	$253.6807
81+	$3.7285	$302.0085

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 15,450 pieces

MOQ: 9 pcs

Order Increment : 1 pcs

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Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
Supplier Lead-Time	Call for availability
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