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IRF7470PBF

Part No IRF7470PBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 40V 10A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 40V
Id - Continuous Drain Current 10A
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V
Rds On (Maximum) at Id, Vgs 13mOhm at 10A, 10V
Gate Source Voltage(th) (Maximum) at Id 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 44nC at 4.5V
Gate Source Voltage (Maximum) ±12V
Input Capacitance (Ciss) (Maximum) at Vds 3430pF at 20V
Power Dissipation (Maximum) 2.5W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 8-SO
Manufacturer Package 8-SOIC
Manufacturer Pack Quantity 3,800
MSL Level 1 (Unlimited)
Win Source Part Number 1187296-IRF7470PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF7470PBF CAD Model

Description

The Infineon Technologies IRF7470PBF is an N-channel MOSFET transistor packaged in 8-SO.

  • Maximum Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 10A
  • Maximum Power Dissipation: 2.5W
  • Input Capacitance (Ciss) (maximum) @ Vds: 3430pF @ 20V
  • Gate-Source Voltage(th) (maximum) @ Id: 2V @ 250μA
  • Gate Charge (Qg) (maximum) @ Vgs: 44nC @ 4.5V
  • Device Status: Obsolete
  • Supply and Demand: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.1269 $53.6497
26+ $3.8657 $100.5082
41+ $3.7351 $153.1391
58+ $3.4739 $201.4862
75+ $3.3433 $250.7475
94+ $3.2127 $301.9938
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,180 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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