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IRF135S203

Part No IRF135S203
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Battery powered circuits | MOSFET NCH 135V 129A D2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 135V
Id - Continuous Drain Current 129A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 8.4mOhm at 77A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 270nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 9700pF at 50V
Power Dissipation (Maximum) 441W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK (TO-263AB)
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 724049-IRF135S203
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF135S203 CAD Model

Description

The Infineon Technologies MOSFET is a high-performance metal-oxide-semiconductor field-effect transistor designed for use in power electronics.

  • Manufacturer: Infineon Technologies
  • Device Type: MOSFET
  • Drain-Source Breakdown Voltage: 135V
  • Continuous Drain Current: 129A
  • Operating Temperature: -55°C to 175°C
  • Package: D2PAK
  • Mounting: Surface Mount
  • Power Dissipation: 441W
  • Input Capacitance: 9700pF @ 50V
  • Gate Source Voltage(th): 4V @ 250μA
  • Gate Charge (Qg): 270nC @ 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.4712 $59.3088
57+ $2.0276 $115.5732
89+ $1.9643 $174.8227
122+ $1.9009 $231.9098
158+ $1.8376 $290.3408
211+ $1.6475 $347.6225
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Availability: 10,000 pieces
MOQ: 24 pcs
Order Increment : 1 pcs
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