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Same model may have multiple batches, images only for reference.
IPTG018N10NM5ATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPTG018N10NM5ATMA1

Part No IPTG018N10NM5ATMA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description TRENCH >=100V PG-HSOG-8
Datasheet
IPTG018N10NM5ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1203682-IPTG018N10NM5ATMA1
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Series OptiMOS™
Package Tape & Reel (TR) Cut Tape (CT)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 3.8W (Ta), 273W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Ultra Librarian 3D Model Ultra Librarian IPTG018N10NM5ATMA1 CAD Model

Description

Features
•N-channel,normallevel
•Verylowon-resistanceRDS(on)
•ExcellentgatechargexRDS(on)product(FOM)
•100%avalanchetested
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
•Idealforhighfrequencyswitchingandsync.rec.

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