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Same model may have multiple batches, images only for reference.
IMZA65R083M1HXKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IMZA65R083M1HXKSA1

Part No IMZA65R083M1HXKSA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description SILICON CARBIDE MOSFET, PG-TO247
Datasheet
IMZA65R083M1HXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1202950-IMZA65R083M1HXKSA1
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products- Transistors FETs, MOSFETs -Single FETs, MOSFETs
Series CoolSiC™
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Rds On (Max) @ Id, Vgs 111mOhm @ 11.2A, 18V
Vgs(th) (Max) @ Id 5.7V @ 3.3mA
Ultra Librarian 3D Model Ultra Librarian IMZA65R083M1HXKSA1 CAD Model

Description

The Infineon Technologies 1202950 is a high-performance N-Channel SiCFET (Silicon Carbide) MOSFET.

  • Series: CoolSiC™
  • Drain to Source Voltage (Vdss): 650V
  • Rds On (Max): 111mOhm @ 11.2A, 18V
  • Vgs(th) (Max) @ Id: 5.7V @ 3.3mA
  • Status: Active
  • Manufacturer: Infineon Technologies
  • Used in: Various electronic applications.

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