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Same model may have multiple batches, images only for reference.
IMZA120R040M1HXKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IMZA120R040M1HXKSA1

Part No IMZA120R040M1HXKSA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description SIC DISCRETE
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1202813-IMZA120R040M1HXKSA1
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products- Transistors- FETs, MOSFETs- Single FETs, MOSFETs
Series CoolSiC™
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Rds On (Max) @ Id, Vgs 54.4mOhm @ 19.3A, 18V
Operating Temperature -55°C ~ 175°C (TJ)
Ultra Librarian 3D Model Ultra Librarian IMZA120R040M1HXKSA1 CAD Model

Description

The Infineon Technologies 1202813 is a high-performance N-Channel SiCFET (Silicon Carbide) transistor from the CoolSiC™ series.

  • Channel Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Series: CoolSiC™
  • Drain to Source Voltage (Vdss): Up to 1200V
  • On-Resistance (Rds On): 54.4mOhm @ 19.3A, 18V
  • Operating Temperature Range (TJ): -55°C to 175°C
  • Package: Tube

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $4.6367 $51.0037
27+ $3.8045 $102.7215
41+ $3.6856 $151.1096
57+ $3.5667 $203.3019
73+ $3.4478 $251.6894
98+ $3.0912 $302.9376
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 440 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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