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IMBG65R260M1HXTMA1

Part No IMBG65R260M1HXTMA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description SILICON CARBIDE MOSFET PG-TO263-
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1202810-IMBG65R260M1HXTMA1
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products- Transistors -FETs, MOSFETs- Single FETs, MOSFETs
Series CoolSIC™ M1
Package Tape & Reel (TR) Cut Tape (CT)
Product Status Active
Technology SiCFET (Silicon Carbide)
Power Dissipation (Max) 65W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7-12
Ultra Librarian 3D Model Ultra Librarian IMBG65R260M1HXTMA1 CAD Model

Description

The Infineon Technologies 1202810 is a high-power SiCFET (Silicon Carbide) MOSFET.

  • Technology: SiCFET (Silicon Carbide)
  • Series: CoolSIC™ M1
  • Power Dissipation: 65W (Tc)
  • Operating Temperature Range: -55°C to 175°C
  • Package Type: PG-TO263-7-12
  • Mounting Type: Surface Mount
  • Product Status: Active
  • Packaging: Tape & Reel (TR) Cut Tape (CT)

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $2.9686 $50.4662
42+ $2.4358 $102.3036
64+ $2.3597 $151.0208
88+ $2.2835 $200.9480
114+ $2.2074 $251.6436
152+ $1.9791 $300.8232
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,000 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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