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Same model may have multiple batches, images only for reference.
IHW20T120FKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IHW20T120FKSA1

Part No IHW20T120FKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 40A 178W TO247-3
Datasheet
IHW20T120FKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 40A
Pulsed Collector Current 60A
Collector-emitter saturation voltage(Max) 2.2V @ 15V, 20A
Maximum Power Dissipation 178W
Total Switching Energy(Ets) 1.8mJ (on), 1.5mJ (off)
Input Type Standard
Gate Charge 120nC
Turn-on and Turn-off delay time 50ns/560ns
Testing Conditions 600V, 20A, 28 Ohm, 15V
Reverse Recovery Time (trr) 140ns
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Win Source Part Number 1045251-IHW20T120FKSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IHW20T120FKSA1 CAD Model

Description

The IHW20T120FKSA1 is an IGBT (Insulated Gate Bipolar Transistor) with a maximum collector-emitter breakdown voltage of 1200V and a maximum current collector of 40A from Infineon Technologies.

  • Collector-Emitter Breakdown Voltage (Max): 1200V
  • Current Collector (Max): 40A
  • IGBT Type: Trench Field Stop
  • Input Type: Standard
  • Mounting Type: Through Hole
  • Package: PG-TO247-3
  • Reverse Recovery Time: 140ns
  • Gate Charge: 120nC
  • Collector-Emitter Saturation Voltage: 2.2V @ 15V and 20A
  • Switching Energy (Turn-On): 1.8mJ
  • Switching Energy (Turn-Off): 1.5mJ
  • Turn-On Delay Time: 50ns
  • Turn-Off Delay Time: 560ns
  • Product Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand Status: Sufficient

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