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IDW12G65C5

Part No IDW12G65C5
Manufacturer Infineon Technologies
Catalog Diodes, Rectifiers - Single
Description DIODE SIL CARB 650V 12A TO247-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
Mfr Infineon Technologies
Series CoolSiC™+
Package Bulk
Product Status Active
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 12A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 12 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 500 µA @ 650 V
Capacitance @ Vr, F 360pF @ 1V, 1MHz
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package PG-TO247-3-41
Operating Temperature - Junction -55°C ~ 175°C
Standard Package 1 pcs
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 602536-IDW12G65C5
Ultra Librarian 3D Model Ultra Librarian IDW12G65C5 CAD Model

Description

The CoolSiC™+ 602536-IDW12G65C5 is a high-performance silicon carbide (SiC) Schottky diode.

  • Maximum DC Reverse Voltage: 650V
  • Average Rectified Current: 12A
  • Technology: CoolSiC™+
  • Recovery Time: No recovery time greater than 500mA
  • Forward Voltage: 1.7V @ 12A
  • Reverse Recovery Time: 0ns
  • Capacitance: 360pF @ 1V and 1MHz
  • Operating Temperature: -55°C to 175°C
  • Package Type: TO-247-3
  • Manufacturer: Infineon Technologies

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.3014 $51.6168
29+ $3.5294 $102.3526
44+ $3.4191 $150.4404
61+ $3.3088 $201.8368
79+ $3.1985 $252.6815
105+ $2.8676 $301.0980
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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