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Same model may have multiple batches, images only for reference.
IDT10S60C Real Image
Same model may have multiple batches, images only for reference.

IDT10S60C

Part No IDT10S60C
Manufacturer Infineon Technologies
Catalog Diodes, Rectifiers - Single
Description DIODE SIL CARB 600V 10A TO220-2
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
Mfr Infineon Technologies
Series thinQ!™
Package Bulk
Product Status Active
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 10A (DC)
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 140 µA @ 600 V
Capacitance @ Vr, F 480pF @ 1V, 1MHz
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package PG-TO220-2-2
Operating Temperature - Junction -55°C ~ 175°C
Standard Package 79 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 601187-IDT10S60C
Ultra Librarian 3D Model Ultra Librarian IDT10S60C CAD Model

Description

The IDT10S60C is a single diode rectifier designed for high voltage applications. It is part of the Infineon Technologies thinQ!™ series.

  • No recovery time greater than: 500mA (Io)
  • Package: Bulk
  • Standard Package: 79 pieces
  • Technology: SiC (Silicon Carbide) Schottky
  • Maximum Reverse Voltage: 600 V
  • Average Rectified Current: 10A (DC)
  • Forward Voltage: 1.7V @ 10A
  • Reverse Recovery Time: 0 ns
  • Reverse Leakage Current: 140 μA
  • Capacitance: 480pF @ 1V and 1MHz
  • Operating Temperature Range: -55°C to 175°C
  • Package Type: TO-220-2
  • Supplier Device Package: PG-TO220-2-2
  • ECCN Status: EAR99
  • MSL Level: 1
  • REACH Status: Vendor undefined
  • HTSUS Code: 8541.10.0080
  • Product Status: Active

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Availability: 7,000 pieces
MOQ: 12 pcs
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