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IDH16G120C5XKSA1

Part No IDH16G120C5XKSA1
Manufacturer Infineon Technologies
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOT 1200V 16A TO220-2-1 / Diode Silicon Carbide Schottky 1200 V 16A (DC) Through Hole PG-TO220-2-1
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr Infineon Technologies
Series CoolSiC™+
Package Tube
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 16A (DC)
Voltage - Forward (Vf) (Max) @ If 1.95 V @ 16 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 50 µA @ 1200 V
Capacitance @ Vr, F 730pF @ 1V, 1MHz
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package PG-TO220-2-1
Operating Temperature - Junction -55°C ~ 175°C
Base Product Number IDH16G120
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Other Names 2156-IDH16G120C5XKSA1,INFINFIDH16G120C5XKSA1,SP001222696
Standard Package 50
Win Source Part Number 1064308-IDH16G120C5XKSA1
Ultra Librarian 3D Model Ultra Librarian IDH16G120C5XKSA1 CAD Model

Description

The IDH16G120C5XKSA1 is a silicon carbide Schottky diode with a voltage DC reverse (Vr) (Max) of 1200 V and an average rectified current (Io) of 16A (DC).

  • Voltage DC Reverse (Vr) (Max): 1200 V
  • Average Rectified Current (Io): 16A (DC)
  • Voltage Forward (Vf) (Max) @ If: 1.95 V @ 16 A
  • Reverse Recovery Time (trr): 0 ns
  • Current Reverse Leakage @ Vr: 50 µA @ 1200 V
  • Capacitance @ Vr, F: 730pF @ 1V, 1MHz
  • Mounting Type: Through-Hole
  • Package: TO-220-2
  • Standard Package: 50
  • Temperature Range: -55°C to 175°C
  • ECCN: EAR99
  • MSL Level: 1 (Unlimited)
  • REACH: Unaffected
  • HTSUS Code: 8541.10.0080
  • Manufacturer: Infineon Technologies

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