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Same model may have multiple batches, images only for reference.
CY7S1061GE30-10BVM Real Image
Same model may have multiple batches, images only for reference.

CY7S1061GE30-10BVM

Part No CY7S1061GE30-10BVM
Manufacturer Infineon Technologies
Catalog Memory
Description IC SRAM 16MBIT PARALLEL 48VFBGA / SRAM - Synchronous, SDR Memory IC 16Mbit Parallel 10 ns 48-VFBGA (6x8)
Datasheet
CY7S1061GE30-10BVM Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs) - Memory - Memory
Mfr Infineon Technologies
Package Tray
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Synchronous, SDR
Memory Size 16Mbit
Memory Organization 1M x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 10ns
Access Time 10 ns
Voltage - Supply 2.2V ~ 3.6V
Temperature Range - Operating -55°C ~ 125°C (TA)
Mounting Type Surface Mount
Package / Case 48-VFBGA
Supplier Device Package 48-VFBGA (6x8)
Base Product Number CY7S1061
Standard Package 2,400
RoHS Status RoHS non-compliant
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A001A2C
HTSUS 8542.32.0041
Win Source Part Number 1347856-CY7S1061GE30-10BVM
Ultra Librarian 3D Model Ultra Librarian CY7S1061GE30-10BVM CAD Model

Description

The Infineon Technologies CY7S1061GE30-10BVM is a 16Mbit SRAM memory chip that is designed for use in a wide range of electronic devices.

  • Technology: Synchronous SRAM
  • Memory Type: Volatile
  • Memory Size: 16Mbit
  • Access Time: 10ns
  • Voltage Supply: 2.2V to 3.6V
  • Mounting Type: Surface Mount
  • Package/Case: 48-VFBGA
  • Memory Format: SRAM
  • Memory Interface: Parallel
  • Write Cycle Time: 10ns
  • Operating Temperature: -55°C to 125°C (TA)
  • ECCN: 3A001A2C

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