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Same model may have multiple batches, images only for reference.
CY14B108M-ZSP25XI Cypress Semiconductor Corp
Same model may have multiple batches, images only for reference.

CY14B108M-ZSP25XI

Part No CY14B108M-ZSP25XI
Manufacturer Infineon Technologies
Catalog Memory
Description IC NVSRAM 8MBIT PAR 54TSOP II
Datasheet
CY14B108M-ZSP25XI Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs) - Memory - Memory
Mfr Infineon Technologies
Package Tray
Product Status Active
Programmable Not Verified
Memory Type Non-Volatile
Memory Format NVSRAM
Technology NVSRAM (Non-Volatile SRAM)
Memory Size 8Mbit
Memory Organization 512K x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 25ns
Access Time 25 ns
Voltage - Supply 2.7V ~ 3.6V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package 54-TSOP II
Base Product Number CY14B108
Standard Package 108 pcs
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B2A
HTSUS 8542.32.0041
Win Source Part Number 581279-CY14B108M-ZSP25XI
Ultra Librarian 3D Model Ultra Librarian CY14B108M-ZSP25XI CAD Model

Description

The CY14B108M-ZSP25XI is an 8Mbit Non-Volatile SRAM (NVSRAM) integrated circuit. It is designed for use in memory applications and operates @ a voltage supply range of 2.7V to 3.6V.

  • Access time: 25 ns
  • Feature: programmable
  • Memory size: 8Mbit
  • Mounting: surface mount package
  • Package: tray package with 108 pieces
  • Series: Infineon Technologies series
  • Package: compatible with the 54-TSOP II package
  • Temperature range: -40°C to 85°C for operating
  • Memory interface: parallel
  • Write cycle time: 25ns
  • Description: This NVSRAM is a reliable and efficient memory solution for various electronic devices.

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