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Same model may have multiple batches, images only for reference.
AIHD10N60RATMA1 Real Image
Same model may have multiple batches, images only for reference.

AIHD10N60RATMA1

Part No AIHD10N60RATMA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IC DISCRETE 600V TO252-3
Datasheet
AIHD10N60RATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 20A
Pulsed Collector Current 30A
Collector-emitter saturation voltage(Max) 2.1V @ 15V, 10A
Maximum Power Dissipation 150W
Total Switching Energy(Ets) 210μJ (on), 380μJ (off)
Input Type Standard
Gate Charge 64nC
Turn-on and Turn-off delay time 14ns/192ns
Testing Conditions 400V, 10A, 23 Ohm, 15V
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Win Source Part Number 1045169-AIHD10N60RATMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AIHD10N60RATMA1 CAD Model

Description

The Infineon Technologies AIHD10N60RATMA1 is a Trench Field Stop IGBT transistor.

  • Collector-Emitter Breakdown Voltage: 600V
  • Current Collector: 20A
  • Gate Charge: 64nC
  • Collector-Emitter Saturation Voltage: 2.1V @ 15V, 10A
  • Total Switching Energy: 210μJ (on), 380μJ (off)
  • Package: PG-TO252-3
  • Suitable for: motor control, uninterruptible power supplies, and welding equipment

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