The 2SD1386 is an NPN silicon epitaxial planar transistor designed for use in audio frequency and general purpose amplifier applications.
Applications:
- Audio Amplifiers
- General Purpose Amplifiers
- Driver Stages
- Switching Applications
Features:
- High Collector Current: IC = 2A
- Low Saturation Voltage: Reduces power dissipation
- High hFE: Good amplification factor
- Epitaxial Planar Silicon Structure: Enhances reliability and performance
Benefits:
- Improved Audio Quality: Suitable for audio applications due to its low noise and high gain characteristics.
- Enhanced Efficiency: Low saturation voltage leads to reduced power loss and improved efficiency.
- Stable Operation: Epitaxial planar structure ensures consistent and reliable operation.
Technical Specifications (Typical):
- Collector-Emitter Voltage (VCEO): 50V
- Collector-Base Voltage (VCBO): 60V
- Emitter-Base Voltage (VEBO): 5V
- Collector Current (IC): 2A
- Collector Dissipation (PC): 10W
- DC Current Gain (hFE): 100 - 320
- Transition Frequency (fT): 140 MHz
The 2SD1386 is usually available in a TO-126 package for easy mounting and thermal management.