The HY628400BLLG70 is a high-speed, low-power CMOS static RAM (SRAM) manufactured by Hynix Semiconductor. It is organized as 512K x 8 bits and features a fast access time of 70ns. This SRAM is designed for use in applications requiring fast data access and low power consumption, such as embedded systems, cache memory, and portable devices.

Applications

• Embedded systems
• Cache memory
• Portable devices
• Networking equipment
• Industrial control systems
• Medical devices

Features

• 512K x 8 bit organization
• Fast access time (70ns)
• Low power consumption
• CMOS technology
• Single 5V power supply
• TTL compatible inputs and outputs
• Available in various package options

Benefits

• High-speed data access
• Extended battery life in portable devices
• Reduced system power consumption
• Easy integration into existing systems
• Wide operating temperature range
• High reliability

Additional Details

The HY628400BLLG70 SRAM's fast access time (70ns) allows for quick data retrieval and storage, making it suitable for applications where speed is critical. Its low power consumption extends battery life in portable devices and reduces overall system power consumption. The CMOS technology ensures high performance and low standby current. The single 5V power supply simplifies system design. The TTL compatible inputs and outputs enable easy integration with other digital components. It is available in various package options to accommodate different board layouts and assembly requirements. The datasheet provides detailed information on the device's electrical characteristics, timing diagrams, and application notes. Its performance is vital for maintaining system responsiveness and efficiency. Its role in providing fast and reliable data storage is essential for various embedded and portable applications. The 512K x 8 organization means it can store 524,288 bytes (512 kilobytes) of data.