The HY51V64400ATC-50 is a 64M-bit Synchronous DRAM (SDRAM) organized as 4,194,304 words x 16 bits x 2 banks. This SDRAM from Hynix Semiconductor offers high bandwidth and low latency, making it ideal for demanding memory applications. It operates at a clock frequency of up to 200 MHz, providing a data transfer rate of up to 400 MB/s.

Applications

• Main memory in personal computers and laptops
• Graphics memory in high-performance video cards
• Memory in network routers and switches
• High-speed data acquisition systems
• Digital signal processing (DSP) applications

Features

• High density: 64M-bit capacity
• Fast clock frequency: Up to 200 MHz
• Low latency operation
• Double data rate (DDR) architecture
• Single 3.3V power supply
• LVTTL compatible inputs and outputs
• Package: TSOP (Thin Small Outline Package)

Benefits

• Improved system performance due to high bandwidth and low latency
• Increased memory capacity for demanding applications
• Reduced power consumption compared to earlier DRAM technologies
• Easy integration with standard logic circuits
• Compact form factor due to the TSOP package

Technical Specifications

The HY51V64400ATC-50 operates on a single 3.3V ± 0.3V power supply. The input and output signals are LVTTL compatible. The device supports burst lengths of 1, 2, 4, 8, and full page. The refresh cycle time is typically 64ms. The operating temperature range is from 0°C to +70°C. It comes in a standard TSOP package, suitable for surface mount technology.

The HY51V64400ATC-50 is a high-performance memory solution for applications requiring high bandwidth and low latency. Its 64M-bit capacity allows for storing large amounts of data, while its fast clock frequency and DDR architecture ensure quick data transfer. The low power consumption makes it suitable for portable devices, and the TSOP package allows for high-density board layouts. It is an excellent choice for modern computing and communication systems.