The HY51V18164CTC-60 is a 16Mbit CMOS Dynamic RAM (DRAM) from Hynix Semiconductor. It's designed for applications requiring high-speed and high-density memory solutions.

Applications

• Computer main memory
• Graphics cards
• Embedded systems
• Industrial control systems
• Telecommunications equipment

Features

• Density: 16Mbit (1M x 16)
• Access Time: 60ns
• Supply Voltage: 3.3V
• Refresh: 512 cycles / 8ms
• Operating Temperature: 0°C to +70°C
• Package: TSOP

Benefits

• High density allows for compact and efficient memory storage.
• Fast access time enables quick data retrieval and processing.
• Low voltage operation reduces power consumption and improves energy efficiency.
• Wide operating temperature range ensures reliable performance in various environments.
• Standard TSOP package simplifies integration into existing systems.

Additional Details

The HY51V18164CTC-60 DRAM is organized as 1M x 16 bits, providing a substantial memory capacity. It features an access time of 60ns, which enables rapid data access. The device operates on a 3.3V power supply, contributing to lower power consumption and reduced heat dissipation. The refresh cycle of 512 cycles / 8ms ensures data integrity by periodically refreshing the memory cells. Its operating temperature range of 0°C to +70°C makes it suitable for a wide range of applications. The TSOP (Thin Small Outline Package) allows for compact and efficient board designs. This DRAM is commonly used in applications requiring a balance of speed, density, and power efficiency.