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Same model may have multiple batches, images only for reference.
H5TQ2G63GFR-PBI
Same model may have multiple batches, images only for reference.

H5TQ2G63GFR-PBI

Part No H5TQ2G63GFR-PBI
Manufacturer Hynix Semiconductor
Catalog DDR
Description DDR3-1600 128Mx16 (2Gb) Ind
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Memory
Win Source Part Number 941142-H5TQ2G63GFR-PBI
Series *
Ultra Librarian 3D Model Ultra Librarian H5TQ2G63GFR-PBI CAD Model

Description

The H5TQ2G63GFR-PBI is a high-speed CMOS Synchronous DRAM designed for use in high-performance computing systems.

  • Capacity: 2 Gbit
  • Data Rate: 1600 Mbps
  • Burst Length: 8
  • CAS Latency: 11
  • Voltage: 1.5V
  • Standard: JEDEC compliant
  • Ideal for: Applications that require high-speed data transfer and low power consumption

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