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Same model may have multiple batches, images only for reference.
RF1S640SM
Same model may have multiple batches, images only for reference.

RF1S640SM

Part No RF1S640SM
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 18A TO263AB / N-Channel 200 V 18A (Tc) 125W (Tc) Surface Mount TO-263AB
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Harris Corporation
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Rds On (Max) @ Id, Vgs 180mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1275 pF @ 25 V
Power Dissipation (Max) 125W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-263AB
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 0000.00.0000
Other Names HARHARRF1S640SM,2156-RF1S640SM
Standard Package 1
Win Source Part Number 979718-RF1S640SM
Ultra Librarian 3D Model Ultra Librarian RF1S640SM CAD Model

Description

The Thomas & Betts electronic component is a MOSFET transistor suitable for use in discrete semiconductor products.

  • Win Source Part Number: 979718-RF1S640SM
  • FET Type: N-Channel
  • Drain to Source Voltage: 200V
  • Maximum Power Dissipation: 125W (Tc)

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