The GMBT5551 is a high-voltage NPN small signal transistor from GTM Corporation. It is designed for use in a variety of general-purpose amplifier and switching applications. This transistor offers high breakdown voltage and fast switching speeds, making it suitable for demanding circuit designs.

Applications:

• High-voltage switching circuits
• General-purpose amplification
• Driver stages in electronic circuits
• Linear and switching applications
• Signal amplification

Features:

• High collector-emitter breakdown voltage (VCEO)
• Low collector-base capacitance
• Fast switching speed
• High current gain (hFE)
• NPN Polarity
• Lead-Free Finish/RoHS Compliant

Benefits:

• Enables high-voltage operation, increasing design flexibility.
• Facilitates efficient switching performance, reducing power losses.
• Provides reliable signal amplification with minimal distortion.
• Reduces the need for additional components in the circuit design due to high gain.
• Meets environmental regulations with lead-free and RoHS compliance.

Specifications:

The GMBT5551 features a collector-emitter breakdown voltage (VCEO) typically around 160V. The collector current (IC) is rated for continuous operation at a maximum of 600mA. It has a total power dissipation of 625mW. The operating and storage junction temperature range is -55°C to +150°C. Its transition frequency is typically 100 MHz allowing for use in higher frequency applications.

The GMBT5551 is commonly available in a through-hole TO-92 package, which is easy to mount and provides good thermal dissipation. It is designed to provide stable and reliable performance across a wide range of operating conditions. Its robust design makes it suitable for industrial and consumer applications.