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G65P06D5

Part No G65P06D5
Manufacturer Goford Semiconductor
Catalog FETs - Single
Description P60V,RD(MAX)<18M@-10V,VTH-2V~-3V
Sample
Rohs State rohs
ECAD Module
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Win Source Part Number WS1201590-G65P06D5
Package Cut Tape (CT)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 18 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6138 pF @ 25 V
Power Dissipation (Max) 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Mounting Type Surface Mount
Supplier Device Package 8-DFN (4.9x5.75)
Package / Case 8-PowerTDFN
Manufacturer Goford Semiconductor
Category Discrete Semiconductor Products -Transistors- FETs, MOSFETs- Single FETs, MOSFETs
Package Tape & Reel (TR)
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Rds On (Max) @ Id, Vgs 18mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V
Vgs (Max) ±20V
Operating Temperature -55°C ~ 150°C (TJ)
Ultra Librarian 3D Model Ultra Librarian G65P06D5 CAD Model

Description

The P-Channel MOSFET from Goford Semiconductor is a high-performance transistor designed for various power switching applications.

  • Drain-to-Source Voltage: 60V
  • On-Resistance: 18mOhm
  • Gate Charge: 75nC
  • Packaging: Tape & Reel
  • Operating Temperature: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6403 $51.2240
195+ $0.5254 $102.4530
295+ $0.5090 $150.1550
410+ $0.4926 $201.9660
525+ $0.4762 $250.0050
705+ $0.4269 $300.9645
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,800 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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