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FMH25N50G-S33PPQ-P

Part No FMH25N50G-S33PPQ-P
Manufacturer Fuji Electric
Catalog Custom Parts (E - I)
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 1185339-FMH25N50G-S33PPQ-P
Categories Custom Parts
Manufacturer Fuji Electric
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FMH25N50G-S33PPQ-P CAD Model

Description

The FMH25N50G-S33PPQ-P is an N-channel enhancement mode power MOSFET from Fuji Electric. This device is designed for high-efficiency switching applications and offers low on-resistance, contributing to reduced power losses and improved system efficiency.

Applications:

  • Power Supplies: Specifically designed for use in switched-mode power supplies (SMPS).
  • Motor Control: Used in motor control circuits for efficient power switching.
  • Inverters: Suitable for DC-AC inverters found in various applications like solar power and UPS systems.
  • High-Frequency Welding: Employed in high-frequency welding equipment due to its fast switching capabilities.
  • Induction Heating: Used in induction heating systems.

Features:

  • N-Channel Enhancement Mode: Operates as an N-channel enhancement mode MOSFET.
  • Low On-Resistance (RDS(on)): Provides low on-resistance for reduced conduction losses.
  • High Avalanche Capability: Designed to withstand high avalanche energy.
  • Fast Switching Speed: Offers fast switching speed for efficient operation in high-frequency applications.
  • Isolated Mounting Base: Provides ease of assembly and higher insulation.
  • RoHS Compliant: Compliant with Restriction of Hazardous Substances Directive.

Benefits:

  • Improved Efficiency: Low on-resistance minimizes conduction losses, leading to improved system efficiency.
  • Reliable Performance: High avalanche capability ensures reliable performance under transient conditions.
  • Simplified Design: Fast switching speed simplifies the design of high-frequency circuits.
  • Easy Installation: Isolated mounting base simplifies assembly and improves safety.
  • Environmentally Friendly: RoHS compliance ensures environmental friendliness.

Additional Details:

This MOSFET typically features a drain-source voltage (VDS) rating of 500V and a continuous drain current (ID) rating of 25A. The gate threshold voltage (VGS(th)) is usually around 3V. It is important to consult the manufacturer's datasheet for the most accurate and up-to-date specifications. The package style is designed for efficient heat dissipation.

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