The QEE413 is a silicon NPN epitaxial phototransistor manufactured by Fairchild Semiconductor, now part of ON Semiconductor. It is designed for applications requiring high sensitivity to infrared radiation. This phototransistor is commonly used in optoelectronic devices and systems where light detection is crucial.

Applications:

• Optical Switches: Used in optical switches for detecting the presence or absence of light.
• Infrared Remote Control Systems: Employed as a detector in remote control receivers.
• Light Beam Detectors: Utilized in security systems and industrial automation for detecting breaks in light beams.
• Card Readers: Integrated into card readers to detect the presence of a card.
• Encoders: Used in rotary and linear encoders for position sensing.

Features:

• High Sensitivity: Excellent sensitivity to infrared radiation.
• NPN Epitaxial Silicon: Provides stable and reliable performance.
• Fast Switching Speed: Enables quick response to changes in light intensity.
• Compact Package: Allows for easy integration into various designs.
• Wide Operating Temperature Range: Suitable for use in diverse environmental conditions.

Benefits:

• Enhanced Detection: Provides precise and reliable light detection.
• Robust Performance: Stable and consistent operation in various conditions.
• Quick Response: Fast switching speed ensures timely detection.
• Ease of Integration: Compact size simplifies design and assembly.
• Cost-Effective Solution: Offers high performance at a competitive price.

Technical Specifications:

The QEE413 typically has a collector-emitter voltage (VCEO) of 30V and a collector current (IC) of 50mA. The power dissipation is around 150mW. The peak spectral response is typically in the infrared range (around 880nm). It is essential to consult the official ON Semiconductor datasheet for precise electrical and optical characteristics.

In summary, the QEE413 silicon NPN epitaxial phototransistor is a versatile and reliable solution for a wide range of applications requiring high sensitivity to infrared radiation. Its fast switching speed, compact design, and stable performance make it an ideal choice for designers looking to enhance the functionality and performance of their optoelectronic devices.