The HGTP2N120CN is an NPT IGBT from Fairchild/ON Semiconductor. It has through-hole mounting and TO-220AB case/package. Its maximum current collector is 13A and the VCEO maximum collector-emitter breakdown voltage is 1200V. The maximum power dissipation is 104W and the pulsed collector current is 20A. The collector-emitter saturation voltage(Max) is 2.4V @ 15V, 2.6A. The total switching energy(Ets) is 96μJ (on), 355μJ (off). The turn-on and turn-off delay time is 25ns/205ns. This product is obsolete(EOL) and has medium popularity.