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FGD3040G2_F085 Real Image FGD3040G2_F085 Real Image
Same model may have multiple batches, images only for reference.
FGD3040G2_F085 Real Image FGD3040G2_F085 Real Image
FGD3040G2_F085 Real Image FGD3040G2_F085 Real Image
Same model may have multiple batches, images only for reference.

FGD3040G2_F085

Part No FGD3040G2_F085
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 400V 41A 150W DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 400V
Maximum Current Collector 41A
Collector-emitter saturation voltage(Max) 1.25V @ 4V, 6A
Maximum Power Dissipation 150W
Input Type Logic
Gate Charge 21nC
Turn-on and Turn-off delay time -/4.8μs
Testing Conditions 300V, 6.5A, 1 kOhm, 5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Win Source Part Number 001168-FGD3040G2_F085
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FGD3040G2_F085 CAD Model

Description

The Fairchild/ON Semiconductor FGD3040G2_F085 is a TO-252AA packaged Insulated Gate Bipolar Transistor (IGBT) with a collector-emitter breakdown voltage of 400V and a maximum collector current of 41A.

  • Gate Charge: 21nC
  • Collector-Emitter Saturation Voltage: 1.25V @ 4V, 6A
  • Maximum Power Dissipation: 150W
  • Category: Discrete Semiconductor Products
  • Supply and Demand Status: Sufficient

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65+ $1.5488 $100.6720
100+ $1.5004 $150.0400
140+ $1.4520 $203.2800
180+ $1.4036 $252.6480
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