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EL816M

Part No EL816M
Manufacturer Everlight Electronics Co Ltd
Catalog END - OF - LIFE
Description 4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
Sample
Rohs State rohs
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Manufacturer Everlight Electronics Co Ltd
Win Source Part Number 1171487-EL816M
Manufacturer Homepage www.everlight.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian EL816M CAD Model

Description

The EL816M is a high-performance phototransistor optocoupler manufactured by Everlight Electronics. It comprises an infrared emitting diode (IRED) optically coupled to a phototransistor. This configuration facilitates electrical isolation between the input (diode) and output (transistor) circuits, making it suitable for applications requiring safety and signal isolation.

Applications

  • Programmable Logic Controllers (PLCs): For isolated input/output modules.
  • Microcontroller Interfaces: Protecting microcontroller inputs from high-voltage transients.
  • Power Supply Isolation: Providing galvanic isolation in power supply circuits.
  • Industrial Control Systems: Isolating control signals in noisy industrial environments.
  • Consumer Electronics: Used in various consumer devices for safety and isolation purposes.

Features

  • High Isolation Voltage: Offers significant electrical isolation between the input and output.
  • High Collector-Emitter Voltage (VCEO): Ensures robust performance under various voltage conditions.
  • Compact Package: Available in a compact package for space-constrained applications.
  • Fast Switching Speed: Enables rapid signal transfer with minimal delay.
  • RoHS Compliant: Complies with environmental standards for lead-free manufacturing.

Benefits

  • Enhanced Safety: Galvanic isolation provides enhanced safety by preventing high-voltage hazards.
  • Noise Immunity: Reduces noise interference in sensitive circuits.
  • Signal Isolation: Isolates sensitive circuits from high-voltage or noisy environments.
  • Improved System Reliability: Protects control systems from voltage spikes and surges.
  • Simplified Design: Facilitates easier integration into existing circuits.

Additional Details

The EL816M is typically supplied in a standard DIP package. Key specifications include a forward voltage of approximately 1.2V for the IRED and a collector-emitter breakdown voltage of around 80V for the phototransistor. The operating temperature range is typically between -30°C and +100°C. The current transfer ratio (CTR) is a critical parameter and varies depending on the specific grade of the EL816M. Designers should consult the datasheet for precise CTR values and other performance characteristics. The device's reliability and robust design make it suitable for diverse applications requiring electrical isolation.

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Pricing & Ordering

Quantity Unit Price Ext. Price
345+ $0.1686 $58.1670
835+ $0.1386 $115.7310
1,295+ $0.1340 $173.5300
1,790+ $0.1294 $231.6260
2,295+ $0.1259 $288.9405
3,095+ $0.1120 $346.6400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,300 pieces
MOQ: 345 pcs
Order Increment : 1 pcs
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