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DMN62D1LFD-7

Part No DMN62D1LFD-7
Manufacturer Diodes Incorporated
Catalog FETs - Single
Description MOSFET N-CH 60V 0.4A DFN1212-3 / N-CHANNEL ENHANCEMENT MODE MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer Diodes Incorporated
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) at 25°C 400mA
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4V
Rds On (Maximum) at Id, Vgs 2Ohm at 100mA, 4V
Vgs(th) (Maximum) at Id 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 0.55nC at 4.5V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 36pF at 25V
Power Dissipation (Maximum) 500mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package X1-DFN1212-3
Manufacturer Package 3-UDFN
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 805270-DMN62D1LFD-7
Ultra Librarian 3D Model Ultra Librarian DMN62D1LFD-7 CAD Model

Description

The DMN62D1LFD-7 is a high-performance, N-channel enhancement mode Field-Effect Transistor (FET) designed and manufactured by Diodes Incorporated. This MOSFET is a testament to Diodes Incorporated’s commitment to providing energy-efficient and reliable solutions for a wide array of electronic applications.

Built using advanced trench technology, the DMN62D1LFD-7 offers a low on-resistance (R<sub>DS(on)), which significantly reduces conduction losses and enhances the overall efficiency of the device. This feature makes it an ideal candidate for power management tasks in modern electronic circuits. Moreover, the FET operates at a continuous drain current (I<sub>D) of 4.2A, ensuring a robust performance for a variety of applications.

The DMN62D1LFD-7 comes in a compact SOT-23 package, which is not only space-saving but also allows for excellent thermal performance. Its small form factor is particularly beneficial in designs where board space is at a premium, such as portable and wearable technology, as well as in high-density circuit designs.

With a low threshold voltage (V<sub>GS(th)), this device ensures a fast switching response, which is crucial for high-speed circuitry and applications that require quick transitions between on and off states. Additionally, the DMN62D1LFD-7 can sustain a maximum drain-source voltage (V<sub>DSS) of 60V, providing a good safety margin for transient conditions and making it suitable for a variety of industrial and consumer electronics.

The device also features low input capacitance (C<sub>iss), which further enhances its switching performance and reduces the delay times in high-frequency operations. This characteristic, combined with its ruggedness and reliability, makes the DMN62D1LFD-7 a preferred choice for power conversion applications, including DC-DC converters, power supplies, and motor control circuits.

In summary, the DMN62D1LFD-7 by Diodes Incorporated is a versatile and efficient N-channel MOSFET that excels in applications where high efficiency, space-saving design, and reliable performance are paramount. Its advanced features and robust design ensure that it meets the stringent requirements of modern electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4553 $50.9355
85+ $1.1941 $101.4985
130+ $1.1568 $150.3840
180+ $1.1195 $201.5100
235+ $1.0821 $254.2935
310+ $0.9702 $300.7620
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,340 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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