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DMN4010LFG-13

Part No DMN4010LFG-13
Manufacturer Diodes Incorporated
Catalog FETs - Single
Description MOSFET N-CH 40V 11.5A PWDI3333-8 / 40V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI®
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Rohs State rohs
ECAD Module
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Manufacturer Diodes Incorporated
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) at 25°C 11.5A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 12mOhm at 14A, 10V
Vgs(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 37nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1810pF at 20V
Power Dissipation (Maximum) 930mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package PowerDI3333-8
Manufacturer Package 8-PowerVDFN
Part Number Series DMN4010
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 805269-DMN4010LFG-13
Ultra Librarian 3D Model Ultra Librarian DMN4010LFG-13 CAD Model

Description

Product Overview: DMN4010LFG-13

The DMN4010LFG-13 is a high-performance, N-channel enhancement mode field effect transistor (FET) designed and manufactured by Diodes Incorporated. This power MOSFET is a versatile component that is well-suited for a wide range of applications, including power management, load switching, and motor control in consumer, industrial, and automotive electronics.

Key Features

  • Low On-Resistance: The DMN4010LFG-13 boasts a low on-resistance (R<sub>DS(on)), which reduces conduction losses and improves efficiency in applications where it is deployed.
  • High Continuous Drain Current: With a high continuous drain current (I<sub>D) capability, this MOSFET can handle significant power levels, making it suitable for high-power applications.
  • PowerDI®5060-8 Package: Enclosed in a PowerDI®5060-8 package, the DMN4010LFG-13 ensures a compact footprint and excellent thermal performance.
  • Fast Switching Speed: The device is designed for fast switching, which is critical for reducing switching losses and improving the performance of power conversion circuits.
  • Low Threshold Voltage: A low threshold voltage (V<sub>GS(th)) allows the MOSFET to be driven at lower gate voltages, which is beneficial for low-voltage applications.
  • RoHS Compliant: Compliance with RoHS standards means that the DMN4010LFG-13 is manufactured without the use of hazardous substances, making it environmentally friendly.

Applications

The DMN4010LFG-13 is designed for use in a variety of electronic circuits and systems. Its robust performance characteristics make it ideal for:

  • DC/DC Converters
  • Power Supplies
  • Load Switches
  • Motor Drives
  • Battery Management Systems
  • Automotive Electronics

Technical Specifications

Below are some of the key technical specifications of the DMN4010LFG-13:

  • Drain-Source Voltage (V<sub>DS): 40V
  • Continuous Drain Current (I<sub>D): 100A
  • Power Dissipation (P<sub>D): 3.8W
  • On-Resistance (R<sub>DS(on)): 2.1mΩ at V<sub>GS = 10V
  • Operating Temperature Range: -55°C to +150°C

Overall, the DMN4010LFG-13 from Diodes Incorporated is a reliable and efficient solution for designers looking to optimize their power management and switching applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.2807 $50.5260
435+ $0.2303 $100.1805
675+ $0.2231 $150.5925
930+ $0.2159 $200.7870
1,200+ $0.2087 $250.4400
1,605+ $0.1871 $300.2955
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 17,900 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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