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DMN3027LFG-7

Part No DMN3027LFG-7
Manufacturer Diodes Incorporated
Catalog FETs - Single
Description N-CHANNEL ENHANCEMENT MODE MOSFET | MOSFET N-CH 30V POWERDI3333-8
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 5.3A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 18.6mOhm at 10A, 10V
Gate Source Voltage(th) (Maximum) at Id 1.8V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 11.3nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 580pF at 15V
Power Dissipation (Maximum) 1W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package PowerDI3333-8
Manufacturer Package 8-PowerVDFN
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 730590-DMN3027LFG-7
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN3027LFG-7 CAD Model

Description

DMN3027LFG-7 N-Channel MOSFET by Diodes Incorporated

The DMN3027LFG-7 is a high-performance N-Channel enhancement mode Field Effect Transistor (FET) designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal semiconductors. This MOSFET is part of Diodes Incorporated's extensive range of power management components, tailored to offer energy-efficient solutions for electronic systems.

Featuring a drain-source voltage (V<sub>DS) of 30V and a continuous drain current (I<sub>D) of 7.5A, the DMN3027LFG-7 is engineered to handle significant power conversion and switching applications. Its low threshold voltage ensures that the device can be driven at lower gate voltages, making it suitable for low-voltage logic level applications. The product is characterized by its low on-resistance (R<sub>DS(on)), which stands at just 27mΩ at V<sub>GS = 10V. This low resistance minimizes power losses and enhances overall efficiency, a critical aspect in modern power-sensitive designs.

Enclosed in a compact, surface-mount PowerDI3333-8 package, the DMN3027LFG-7 is optimized for space-constrained applications. The package is designed to provide excellent thermal performance and reliability, ensuring stable operation even under high switching frequencies and demanding environmental conditions.

This MOSFET also features fast switching speeds, which is an essential attribute for high-frequency power supplies and DC-DC converters. The DMN3027LFG-7's body diode exhibits low reverse recovery time (t<sub>rr), contributing to the efficiency of the device in applications that require synchronous rectification.

Applications for the DMN3027LFG-7 are diverse, ranging from power management in portable devices, computing, and networking equipment to motor drives and battery management systems. Its robustness and efficiency also make it an excellent choice for LED lighting solutions and other power-intensive applications where energy conservation is paramount.

Overall, the DMN3027LFG-7 by Diodes Incorporated is a versatile and reliable component that offers designers a balance of performance, efficiency, and compactness, making it an ideal choice for modern electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0036 $50.1800
125+ $0.8235 $102.9375
190+ $0.7978 $151.5820
260+ $0.7720 $200.7200
335+ $0.7463 $250.0105
450+ $0.6691 $301.0950
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,970 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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