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DMN3018SFG-7

Part No DMN3018SFG-7
Manufacturer Diodes Incorporated
Catalog FETs - Single
Description 30V N-CHANNEL ENHANCEMENT MODE MOSFET | MOSFET N-CH 30V 8.5A POWERDI
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 8.5A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 21mOhm at 10A, 10V
Gate Source Voltage(th) (Maximum) at Id 2.1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 13.2nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 697pF at 15V
Power Dissipation (Maximum) 1W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package PowerDI3333-8
Manufacturer Package 8-PowerVDFN
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 737918-DMN3018SFG-7
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN3018SFG-7 CAD Model

Description

Product Overview: DMN3018SFG-7

The DMN3018SFG-7 is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) designed and manufactured by Diodes Incorporated. This MOSFET is an essential component in a wide range of applications, including power management, load switching, and DC-DC conversion in consumer electronics, computing devices, and portable equipment.

Key Features

  • Low On-Resistance: The DMN3018SFG-7 features a low on-resistance (R<sub>DS(on)), which enhances its efficiency by minimizing power loss during operation. This characteristic is crucial for applications requiring high efficiency and low heat generation.
  • High Continuous Drain Current: With a continuous drain current (I<sub>D) of 7.3A, this MOSFET can handle significant current, making it suitable for high-power applications.
  • High-Speed Switching: The device is designed for fast switching, enabling quick transitions between on and off states, which is beneficial for high-frequency circuits and power converters.
  • Low Threshold Voltage: The low threshold voltage (V<sub>GS(th)) ensures that the MOSFET can be easily driven to conduction, allowing for a broader range of drive voltages and compatibility with different logic levels.
  • PowerDI®5060-8 Package: Encased in a compact PowerDI®5060-8 package, the DMN3018SFG-7 is designed for space-saving PCB layouts, maintaining a small footprint without sacrificing performance.

Applications

The versatility of the DMN3018SFG-7 MOSFET makes it suitable for various applications, including:

  • Power Supply Circuits
  • DC-DC Converters
  • Battery Management Systems
  • Motor Control Modules
  • Load Switches
  • Power Management in Portable Devices

Quality and Reliability

Diodes Incorporated is committed to delivering high-quality products. The DMN3018SFG-7 is built to meet strict industry standards, ensuring reliability and performance consistency. It undergoes rigorous testing to guarantee it meets the requirements for a wide range of commercial and industrial applications.

For detailed technical specifications, application notes, and support documentation, customers are encouraged to visit the Diodes Incorporated official website or contact their sales representatives.

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Pricing & Ordering

Quantity Unit Price Ext. Price
255+ $0.1988 $50.6940
615+ $0.1631 $100.3065
950+ $0.1580 $150.1000
1,310+ $0.1529 $200.2990
1,695+ $0.1478 $250.5210
2,265+ $0.1326 $300.3390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 82,165 pieces
MOQ: 255 pcs
Order Increment : 1 pcs
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