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DMN2550UFA-7B

Part No DMN2550UFA-7B
Manufacturer Diodes Incorporated
Catalog FETs - Single
Description Low On-Resistance | MOSFET N-CH 20V 0.6A X2DFN-3
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Tape and Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 20V
Id - Continuous Drain Current 600mA
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Maximum) at Id, Vgs 450mOhm at 200mA, 4.5V
Gate Source Voltage(th) (Maximum) at Id 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 0.88nC at 4.5V
Gate Source Voltage (Maximum) ±8V
Input Capacitance (Ciss) (Maximum) at Vds 52.5pF at 16V
Power Dissipation (Maximum) 360mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package X2-DFN0806-3
Manufacturer Package 3-XFDFN
Manufacturer Pack Quantity 10,000
MSL Level 1 (Unlimited)
Win Source Part Number 752928-DMN2550UFA-7B
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMN2550UFA-7B CAD Model

Description

Diodes Incorporated DMN2550UFA-7B - N-Channel Enhancement Mode Field Effect Transistor

The DMN2550UFA-7B from Diodes Incorporated is a high-performance, N-Channel Enhancement Mode Field Effect Transistor (FET) designed for power switching applications. This semiconductor device is a crucial component in modern electronics, offering efficient power conversion and control within circuits.

Constructed with advanced technology, the DMN2550UFA-7B features a compact footprint in a DFN2020 package, making it ideal for space-constrained applications. Its ultra-thin profile allows for improved thermal performance and reduced on-resistance, providing an effective solution for power management challenges.

With a continuous drain current (ID) of 4.2A and a drain-source voltage (VDS) of 25V, this FET is capable of handling moderate power levels while maintaining energy efficiency. The low threshold voltage (VGS(th)) ensures that the device can be driven at lower gate voltages, which is particularly beneficial for battery-operated devices where power conservation is paramount.

The DMN2550UFA-7B comes with several protective features, including over-temperature and over-current protection. These safeguards contribute to the longevity and reliability of both the transistor and the overall system it is a part of. Additionally, the device boasts a fast switching speed, which is essential for applications requiring high-frequency operation such as DC-DC converters, power supplies, and motor control circuits.

Engineers and designers can rely on the DMN2550UFA-7B for its robustness and versatility. Its low on-resistance (RDS(on)) minimizes conductive losses, making it an excellent choice for enhancing energy efficiency in a wide range of electronic products, from portable devices to industrial automation systems.

For those seeking a reliable and efficient N-Channel FET, the DMN2550UFA-7B from Diodes Incorporated offers the performance and features necessary to meet the demands of modern electronic designs. Its combination of power handling, protection features, and compact size makes it a go-to component for innovative power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
620+ $0.0807 $50.0340
1,325+ $0.0755 $100.0375
2,060+ $0.0729 $150.1740
2,955+ $0.0677 $200.0535
3,845+ $0.0651 $250.3095
4,800+ $0.0625 $300.0000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,000 pieces
MOQ: 620 pcs
Order Increment : 1 pcs
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