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DMN1045UFR4-7

Part No DMN1045UFR4-7
Manufacturer Diodes Incorporated
Catalog FETs - Single
Description MOSFET N-CH 12V 3.2A DFN1010-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Diodes Incorporated
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) at 25°C 3.2A
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Maximum) at Id, Vgs 45mOhm at 3.2A, 4.5V
Vgs(th) (Maximum) at Id 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 4.8nC at 4.5V
Maximum Vgs ±8V
Input Capacitance (Ciss) (Maximum) at Vds 375pF at 10V
Power Dissipation (Maximum) 500mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package X2-DFN1010-3
Manufacturer Package 3-XFDFN
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity High
Supply and Demand Status Sufficient
Win Source Part Number 801407-DMN1045UFR4-7
Ultra Librarian 3D Model Ultra Librarian DMN1045UFR4-7 CAD Model

Description

DMN1045UFR4-7 - A High-Efficiency N-Channel MOSFET from Diodes Incorporated

The DMN1045UFR4-7 is a cutting-edge N-Channel enhancement mode Field Effect Transistor (MOSFET) brought to the market by Diodes Incorporated, a leading manufacturer in the semiconductor industry. This product is designed to optimize power efficiency and performance, making it an ideal choice for a wide range of applications, including power management, load switch, and battery protection circuits.

Constructed with advanced MOSFET technology, the DMN1045UFR4-7 boasts a low on-resistance (R<sub>DS(on)) of just 6.5mΩ at V<sub>GS = 10V, which significantly reduces conduction losses and enhances overall device efficiency. This feature, combined with a maximum continuous drain current (I<sub>D) of 12A, allows for high current handling capability in a compact form factor.

The DMN1045UFR4-7 is housed in an ultra-small DFN2020 package, measuring only 2mm x 2mm, which is a testament to Diodes Incorporated's commitment to miniaturization without compromising on performance. This makes the product an excellent choice for space-constrained applications that require high-density power designs.

Furthermore, this MOSFET supports a wide range of operating temperatures, from -55°C to 150°C, ensuring reliable performance across various environmental conditions. Its low threshold voltage (V<sub>GS(th)) allows for easy driveability, which is particularly beneficial in low-voltage applications.

Key features of the DMN1045UFR4-7 include:

  • Low on-resistance (R<sub>DS(on))
  • High continuous drain current (I<sub>D)
  • Ultra-compact DFN2020 package
  • Wide operating temperature range
  • Low threshold voltage

Diodes Incorporated's DMN1045UFR4-7 is RoHS compliant and halogen-free, reflecting the company's dedication to environmental sustainability and safety. With its robust design and superior electrical characteristics, this MOSFET is a versatile component that can enhance the performance and efficiency of a broad array of electronic systems.

Whether you're designing power supplies, motor controls, or portable electronics, the DMN1045UFR4-7 from Diodes Incorporated is a reliable and high-performing solution that can meet your circuitry needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
490+ $0.1024 $50.1760
1,190+ $0.0841 $100.0790
1,845+ $0.0814 $150.1830
2,540+ $0.0788 $200.1520
3,285+ $0.0762 $250.3170
4,395+ $0.0683 $300.1785
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 87,800 pieces
MOQ: 490 pcs
Order Increment : 1 pcs
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