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Same model may have multiple batches, images only for reference.
S29GL064S80DHB023 Real Image
Same model may have multiple batches, images only for reference.

S29GL064S80DHB023

Part No S29GL064S80DHB023
Manufacturer Cypress Semiconductor Corp
Catalog Unclassified Memory
Description IC FLASH 64MBIT PARALLEL 64FBGA  /  FLASH - NOR Memory IC 64Mb (8M x 8, 4M x 16) Parallel 80 ns 64-FBGA (9x9)
Datasheet
S29GL064S80DHB023 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs)>Memory
Mfr Cypress Semiconductor Corp
Series Automotive, AEC-Q100, GL-S
Package Tape & Reel (TR)
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 64Mb (8M x 8, 4M x 16)
Memory Interface Parallel
Write Cycle Time - Word, Page 60ns
Access Time 80 ns
Voltage - Supply 2.7V ~ 3.6V
Temperature Range - Operating -40°C ~ 105°C (TA)
Mounting SMD (SMT)
Package / Case 64-LBGA
Supplier Device Package 64-FBGA (9x9)
Base Product Number S29GL064
Standard Package 2,200
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B1A
HTSUS 8542.32.0071
Win Source Part Number 1255545-S29GL064S80DHB023
Ultra Librarian 3D Model Ultra Librarian S29GL064S80DHB023 CAD Model

Description

The S29GL064S80DHB023 is a 64Mb (8M x 8, 4M x 16) non-volatile FLASH - NOR memory IC from Cypress Semiconductor Corp.

  • Series: GL-S series designed for automotive applications
  • Standards: Qualified to AEC-Q100 standards
  • Access Time: 80 ns
  • Voltage Range: 2.7V to 3.6V
  • Package: 64-LBGA
  • Mounting: SMD (SMT) technology
  • Write Cycle Time: 60ns
  • Memory Interface: Parallel
  • ECCN: 3A991B1A compliant
  • MSL Level: 3

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