The CY14B104LA-ZS25XI is a 4-Mbit (512 K x 8) nonvolatile static RAM (nvSRAM) manufactured by Cypress Semiconductor Corp. It combines high-performance SRAM with nonvolatile data storage using SONOS technology. This allows the device to retain data even when power is lost, making it suitable for applications requiring data logging and critical data storage.

Applications

• Data logging
• Meter reading
• Industrial control
• Medical equipment
• Networking

Features

• 4-Mbit (512 K x 8) nvSRAM
• High-speed SRAM with read/write cycle times
• Automatic STORE on power-down
• RECALL on power-up
• Unlimited endurance
• Data retention of 20 years at 85°C
• 25 ns access time
• Industrial temperature range
• RoHS compliant

Benefits

• Provides nonvolatile data storage without the need for batteries
• Offers fast access times for high-performance applications
• Ensures data integrity in the event of power loss
• Reduces system complexity and cost
• Operates reliably in harsh environments

The CY14B104LA-ZS25XI nvSRAM is ideal for applications that require frequent data logging or storage of critical data. The automatic STORE and RECALL functions ensure that data is automatically backed up to the nonvolatile memory during power loss and restored when power is restored. The device's high endurance and long data retention make it suitable for long-term data storage applications. The 25ns access time supports high-speed data operations.

Technical Specifications:

• Memory Size: 4 Mbit (512 K x 8)
• Access Time: 25 ns
• Supply Voltage: 3.0V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package: SOIC
• Data Retention: 20 years at 85°C