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Same model may have multiple batches, images only for reference.
AO4448L Real Image
Same model may have multiple batches, images only for reference.

AO4448L

Part No AO4448L
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog FETs - Single
Description MOSFET N-CH 80V 10A 8SOIC / 80V N-Channel MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Bulk
Part Status Obsolete (End Of Life)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) at 25°C 10A
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Rds On (Maximum) at Id, Vgs 16mOhm at 10A, 10V
Vgs(th) (Maximum) at Id 4.2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 34nC at 10V
Maximum Vgs ±25V
Input Capacitance (Ciss) (Maximum) at Vds 2005pF at 40V
Power Dissipation (Maximum) 3.1W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 8-SO
Manufacturer Package 8-SOIC
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 811064-AO4448L
Ultra Librarian 3D Model Ultra Librarian AO4448L CAD Model

Description

The Alpha & Omega Semiconductor Inc. AO4448L is an N-channel MOSFET (Metal Oxide) electronic component. It has a drain to source voltage (Vdss) of 80V and a maximum power dissipation of 3.1W. The product is packaged in an 8-SOIC and is mounted in SMD style. It is an obsolete (End Of Life) product, with limited supply and demand status. The product comes with specifications such as Win Source Part Number, Packaging, Technology, FET Type, and more. It can be used in various electronic devices.

  • FET Type: N-channel
  • Drain to Source Voltage (Vdss): 80V
  • Power Dissipation (Maximum): 3.1W

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