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Same model may have multiple batches, images only for reference.
NCE80TD65BT Wuxi NCE Power Semiconductor Co., Ltd – Price, Stock & Datasheet
Same model may have multiple batches, images only for reference.

NCE80TD65BT

Part No NCE80TD65BT
Manufacturer Wuxi NCE Power Semiconductor Co., Ltd
Catalog IGBTs - Single
Description 390W 160A 650V FS (Field Stop) TO-247 Single IGBTs RoHS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Package TO-247
Pd - Power Dissipation 390W
Td(off) 172ns
Td(on) 19ns
Operating Temperature -55℃~+150℃
Current - Collector(Ic) 160A
Collector-Emitter Breakdown Voltage (Vces) 650V
Reverse Transfer Capacitance (Cres) 181pF
IGBT Type FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic) 4V@1mA
Reverse Recovery Time(trr) 194ns
Switching Energy(Eoff) 1.45mJ
Turn-On Energy (Eon) 1.43mJ
Input Capacitance(Cies) 9.188nF
Gate Charge(Qg) 331nC@15V
Output Capacitance(Coes) 258pF
Ultra Librarian 3D Model Ultra Librarian NCE80TD65BT CAD Model

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