The TLP293 is a small outline photocoupler from Toshiba Semiconductor and Storage. This device consists of a gallium arsenide infrared emitting diode optically coupled to a silicon phototransistor. It is designed for high-density mounting applications and offers reinforced insulation.

Applications:

• Programmable Logic Controllers (PLCs)
• Factory automation equipment
• Inverter control
• Power supplies
• Measuring instruments

Features:

• Small outline package (SO4), saving board space
• High isolation voltage (3750 Vrms), providing safety and protection
• Various current transfer ratio (CTR) ranks available, offering flexibility in circuit design
• Operating temperature range of -55°C to 110°C, suitable for industrial environments
• Lead-free, promoting environmental responsibility

Benefits:

• Space-saving design allows for higher component density on circuit boards.
• Enhanced safety and protection due to high isolation voltage between input and output.
• Versatile application due to a wide range of current transfer ratios that can be selected for specific needs.
• Reliable operation in harsh industrial environments due to wide operating temperature range.
• Environmentally friendly product by conforming to lead-free standards.

Additional Details:

The TLP293 features a collector-emitter voltage of 80V and a collector current of 50mA. The isolation voltage is rated at 3750 Vrms for one minute. The typical forward voltage of the infrared LED is 1.2V, and the typical collector-emitter saturation voltage is 0.1V. This photocoupler is ideal for applications where galvanic isolation is required to protect sensitive circuits from high voltages or to prevent ground loops.

Different suffixes appended to the TLP293 denote different CTR (Current Transfer Ratio) ranks. Engineers can choose the rank that best suits their application to optimize performance.