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RN2711(TE85L,F)

Part No RN2711(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.2W USV
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Typical Gain (hFE) (Min) 400 @ 1mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 200MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package USV
Win Source Part Number 106606-RN2711(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN2711(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage 106606-RN2711(TE85L,F) is a high-performance dual PNP pre-biased emitter-coupled transistor.

  • Maximum Current Collector: 100mA
  • Collector-Emitter Breakdown Voltage: 50V
  • Typical Gain: 400 @ 1mA and 5V
  • Maximum Power Dissipation: 200mW
  • Package: USV case
  • Mounting Technology: SMD (SMT)
  • Frequency Transition: 200MHz
  • Collector Cut-off Current (Max): 100nA (ICBO)
  • Ideal for: Discrete semiconductor products

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