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JDH2S02FS(TPL3)

Part No JDH2S02FS(TPL3)
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Diodes
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 0617+
Reference case SOD923
Manufacturer Toshiba Semiconductor and Storage
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Win Source Part Number 746412-JDH2S02FS(TPL3)
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian JDH2S02FS(TPL3) CAD Model

Description

The JDH2S02FS(TPL3) is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Toshiba Semiconductor and Storage. It is designed for switching and amplification applications in various electronic circuits. This MOSFET is characterized by its low on-resistance, fast switching speed, and high power efficiency.

Applications:

  • DC-DC Converters: Used as a switching element in power supplies and voltage regulators.
  • Motor Control: Employed in controlling the speed and direction of DC motors.
  • Power Amplifiers: Used to amplify signals in audio and RF circuits.
  • Load Switching: Controls the flow of current to various loads in electronic systems.

Features:

  • Low On-Resistance (RDS(on)): Minimizes power loss during switching, increasing efficiency.
  • Fast Switching Speed: Enables high-frequency operation in switching applications.
  • High Drain Current (ID): Allows for handling of high-power loads.
  • Low Gate Charge (Qg): Reduces the drive power required for switching, improving efficiency.
  • Avalanche Rated: Withstands high-energy pulses, enhancing reliability.
  • Surface Mount Package: Allows for compact board designs and automated assembly.

Benefits:

  • Improved Power Efficiency: Reduces power loss and heat generation in switching applications.
  • Faster Switching Performance: Enables high-frequency operation for improved system performance.
  • Higher Power Handling Capability: Allows for controlling larger loads and higher currents.
  • Simplified Circuit Design: Requires less drive power, simplifying circuit design.
  • Enhanced Reliability: Withstands high-energy pulses, ensuring reliable operation.

Additional Details:

The JDH2S02FS(TPL3) has specific voltage and current ratings that must be considered during circuit design. It features a gate-source voltage (VGS) rating, a drain-source voltage (VDS) rating, and a continuous drain current (ID) rating. The device is typically available in a surface-mount package, such as a SOP or DPAK. Toshiba provides detailed datasheets and application notes to aid in the proper use and application of this MOSFET. It complies with RoHS standards, ensuring it is free from hazardous substances. Proper thermal management is essential for maintaining the performance and reliability of the MOSFET.

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