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Same model may have multiple batches, images only for reference.
GT15J321 Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

GT15J321

Part No GT15J321
Manufacturer Toshiba Semiconductor and Storage
Catalog IGBTs - Single
Description High Power Switching Applications Fast Switching Applications
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family IGBTs - Single
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 269672-GT15J321
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian GT15J321 CAD Model

Description

The GT15J321 is a high power insulated gate bipolar transistor (IGBT) designed by Toshiba Semiconductor and Storage. It is a single IGBT that is commonly used in various applications. The device has a high popularity in the market and the supply and demand status is sufficient. The component is designed to operate at high frequencies and high voltage levels.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6722 $60.4980
210+ $0.5521 $115.9410
325+ $0.5348 $173.8100
450+ $0.5174 $232.8300
580+ $0.5001 $290.0580
775+ $0.4481 $347.2775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 41,200 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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