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Same model may have multiple batches, images only for reference.
CMS10I30A(TE12L,QM
Same model may have multiple batches, images only for reference.

CMS10I30A(TE12L,QM

Part No CMS10I30A(TE12L,QM
Manufacturer Toshiba Semiconductor and Storage
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTTKY 30V 1A M-FLAT / Diode Schottky 30 V 1A Surface Mount M-FLAT (2.4x3.8)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel (TR)
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 30 V
Current - Average Rectified (Io) 1A
Voltage - Forward (Vf) (Max) @ If 360 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 100 µA @ 30 V
Capacitance @ Vr, F 82pF @ 10V, 1MHz
Mounting SMD (SMT)
Package / Case SOD-128
Supplier Device Package M-FLAT (2.4x3.8)
Operating Temperature - Junction 150°C (Max)
Base Product Number CMS10
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.10.0080
Other Names CMS10I30A(TE12LQM
Standard Package 3,000
Win Source Part Number 958829-CMS10I30A(TE12L,QM
Ultra Librarian 3D Model Ultra Librarian CMS10I30A(TE12L,QM CAD Model

Description

The CMS10I30A(TE12L,QM) is a fast recovery diode that is designed for use in rectifiers and single diodes.

  • Type: Schottky Diode
  • Voltage DC Reverse (Vr) (Max): 30 V
  • Average Rectified Current: 1A
  • Voltage Forward (Vf) (Max) @ If: 360 mV @ 1 A
  • Current Reverse Leakage @ Vr: 100 µA @ 30 V
  • Capacitance @ Vr, F: 82pF @ 10V, 1MHz
  • Recovery Speed: =< 500ns, > 200mA (Io)
  • Operating Temperature: 150°C (Max)
  • Manufacturer: Toshiba Semiconductor and Storage

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