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2N7001TEVM

Part No 2N7001TEVM
Manufacturer Texas Instruments
Catalog Evaluation and Demonstration Boards and Kits
Description DEVELOPMENT INTERFACE / 2N7001T Level Shifter Interface Evaluation Board
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Development Boards, Kits, Programmers>Evaluation and Demonstration Boards and Kits
Mfr Texas Instruments
Package Bulk
Type Interface
Function Level Shifter
Utilized IC / Part 2N7001T
Supplied Contents Board(s)
Base Product Number 2N7001
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8473.30.1180
Other Names 296-50771
Standard Package 1
Win Source Part Number 1036429-2N7001TEVM
Ultra Librarian 3D Model Ultra Librarian 2N7001TEVM CAD Model

Description

The 2N7001TEVM is a versatile and innovative evaluation module from Texas Instruments, designed to facilitate the testing and development of circuits using the 2N7001T Dual N-Channel MOSFET. This product is an excellent tool for engineers and designers who require a reliable platform to assess the performance of the MOSFET in various applications.

Key Features:

  • Integrated MOSFET: The module includes the 2N7001T, a high-performance, dual N-Channel MOSFET that offers low on-resistance and fast switching performance, making it suitable for a wide range of power management applications.
  • Compact Design: The 2N7001TEVM is designed with a small form factor, allowing for easy integration into existing systems without the need for significant space.
  • User-Friendly Interface: It comes with easy-to-access test points and connectors, providing a straightforward user experience for both novice and experienced users.
  • Versatile Application: The evaluation module can be used for a variety of applications, including load switching, power conversion, and motor control, among others.
  • Comprehensive Documentation: Texas Instruments provides detailed documentation, including schematics, user manuals, and application notes to support the development process and reduce time to market.

Technical Specifications:

  • Voltage Rating: The 2N7001T supports a maximum VDS of 60V, making it suitable for a range of intermediate voltage applications.
  • Current Handling: With a continuous drain current (ID) rating of 115 mA, the MOSFET can handle moderate power levels.
  • On-Resistance: The device boasts a low RDS(on) of 7.5 ohms at a VGS of 10V, ensuring efficient operation with minimal power loss.

Applications:

The 2N7001TEVM is suited for various applications including:

  • Power management in portable devices
  • DC/DC converters
  • Battery management systems
  • Switching regulators
  • Motor control circuits

Overall, the 2N7001TEVM from Texas Instruments is an indispensable tool for engineers looking to evaluate and implement the 2N7001T Dual N-Channel MOSFET in their designs. Its combination of performance, ease of use, and support materials make it an excellent choice for a wide array of power management applications.

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