The Samsung K4X1G323PE-FGC6 is a 1 Gbit Low Power DDR (LPDDR) SDRAM, designed for mobile and embedded applications requiring high bandwidth and low power consumption. This memory chip aims to provide optimal performance while minimizing battery drain in portable devices.

Applications

• Smartphones
• Tablets
• Portable Gaming Devices
• Automotive Infotainment Systems
• Digital Cameras

Features

• 1Gbit (32M x 32) memory density
• LPDDR interface for low power consumption
• Operating frequency up to 400 MHz
• Double data rate architecture
• Clock enable (CKE) power-down mode
• Partial Array Self Refresh (PASR) for efficient power management
• Deep Power Down (DPD) mode

Benefits

• Extended battery life in mobile devices
• High-speed data access for demanding applications
• Reduced system power consumption
• Optimized memory performance for mobile environments
• Reliable operation in a wide range of temperatures

Technical Specifications

The K4X1G323PE-FGC6 operates at a voltage of 1.8V/1.2V. It supports burst lengths of 2, 4, 8, and 16. The chip incorporates a 32-bit prefetch architecture to enable high-speed data transfer. It adheres to JEDEC standards for LPDDR SDRAM. The component is available in a FBGA (Fine-pitch Ball Grid Array) package. The operating temperature range is typically between -25°C and 85°C.

This LPDDR SDRAM device offers a reliable and power-efficient memory solution for various mobile applications. Its low power consumption and high-speed data transfer capabilities make it a suitable choice for battery-powered devices.